symbol v ds v gs i dm t j ,t stg symbol typ max 35 45 65 85 120 155 175 235 maximumjunctiontoambient a t10s r q ja c/w maximumjunctiontoambient a steadystate c/w junctionandstoragetemperaturerange 55to150 c powerdissipation a t a =25c p dsm 1.5 pulseddraincurrent c 15 continuousdrain current a t a =25c i d maximum units parameter v v 8 gatesourcevoltage drainsourcevoltage 20 thermal characteristics parameter units 3 w t a =70c 0.95 a t a =70c 2.3 maximumjunctiontoambient b t10s r q ja c/w maximumjunctiontoambient b steadystate c/w AON2801 features v ds (v)=20v i d =3a(v gs =4.5v) r ds(on) <120m w (v gs =4.5v) r ds(on) <160m w (v gs =2.5v) r ds(on) <200m w (v gs =1.8v) theAON2801/lusesadvancedtrenchtechnologyto provideexcellentr ds(on) ,lowgatechargeand operationwithgatevoltagesaslowas1.8v.this deviceissuitableforuseasaloadswitchorinpwm applications. AON2801andAON2801lareelectricallyidentical. rohscompliant halogenfree* g1 d1 s1 g2 d2 s2 dfn 2x2 package top bottom s1 g1 d2 s2 d1 g2 dual p-channel enhancement mode field general description effect transistor www.freescale.net.cn 1 / 5
symbol min typ max units bv dss 20 v 1 t j =55c 5 i gss 100 na v gs(th) 0.3 0.55 1 v i d(on) 15 a 100 120 t j =125c 135 170 128 160 m w 160 200 m w g fs 6 s v sd 0.76 v i s 1 a c iss 540 700 pf c oss 90 pf c rss 63 pf r g 9.5 w q g 5 6.5 nc q gs 1.2 nc q gd 1 nc t d(on) 5 ns t r 40 ns t d(off) 28.5 ns t f 46 ns t rr 21 28 ns q rr 9.1 nc 15 parameter conditions static parameters electrical characteristics (t j =25c unless otherwise noted) drainsourcebreakdownvoltage i d =250 m a,v gs =0v i dss zerogatevoltagedraincurrent v ds =20v,v gs =0v m a gatebodyleakagecurrent v ds =0v,v gs =8v gatethresholdvoltage v ds =v gs i d =250 m a onstatedraincurrent v gs =4.5v,v ds =5v r ds(on) staticdrainsourceonresistance v gs =4.5v,i d =3a m w v gs =2.5v,i d =2.6a v gs =1.8v,i d =1.5a forwardtransconductance v ds =5v,i d =3a diodeforwardvoltage i s =1a,v gs =0v maximumbodydiodecontinuouscurrent dynamic parameters inputcapacitance v gs =0v,v ds =10v,f=1mhz outputcapacitance reversetransfercapacitance gateresistance v gs =0v,v ds =0v,f=1mhz switching parameters totalgatecharge v gs =4.5v,v ds =10v,i d =3a gatesourcecharge gatedraincharge turnondelaytime v gs =4.5v,v ds =10v,r l =1.5 w , r gen =3 w turnonrisetime turnoffdelaytime turnofffalltime bodydiodereverserecoverytime i f =3a,di/dt=100a/ m s bodydiodereverserecoverycharge i f =3a,di/dt=100a/ m s a:thevalueofr q ja ismeasuredwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.the powerdissipationp dsm isbasedonr q ja andthemaximumallowedjunctiontemperatureof150c.thevalueinanygivenapplicationdepends ontheuser'sspecificboarddesign,andthemaximumtemperatureof150cmaybeusedifthepcballowsitto. b.thevalueofr q ja ismeasuredwiththedevicemountedonaminimumpadboardwith2oz.copper,inastillairenvironmentwitht a =25c. thepowerdissipationp dsm isbasedonr q ja andthemaximumallowedjunctiontemperatureof150c.thevalueinanygivenapplication dependsontheuser'sspecificboarddesign,andthemaximumtemperatureof150cmaybeusedifthepcballowsitto. c.ther q ja isthesumofthethermalimpedencefromjunctiontocaser q jc andcasetoambient. d.thestaticcharacteristicsinfigures1to6areobtainedusing<300 m spulses,dutycycle0.5%max. e.thesetestsareperformedwiththedevicemountedon1in 2 fr4boardwith2oz.copper,inastillairenvironmentwitht a =25c.thesoa curveprovidesasinglepulserating. *thisdeviceisguaranteedgreenafterdatacode7111(oct152007). rev2:sep2008 AON2801 dual p-channel enhancement mode field effect transistor www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 15 12 0 3 6 9 12 15 0 1 2 3 4 -v ds (volts) figure 1: on-region characteristics -i d (a) v gs =1.5v 2.0v 2.5v 4.5v 3.0v 0 3 6 9 12 15 0 1 2 3 4 -v gs (volts) figure 2: transfer characteristics -i d (a) 25c 125c v ds =5v 80 120 160 200 240 280 0 2 4 6 8 10 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) v gs =1.8v v gs =2.5v v gs =4.5v 1e05 1e04 1e03 1e02 1e01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.7 0.9 1.1 1.3 1.5 50 25 0 25 50 75 100 125 150 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =1.8v i d =1.5a v gs =4.5v i d =3a v gs =2.5v i d =2.6a 80 120 160 200 240 280 320 0 2 4 6 8 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) i d =3a 25c 125c AON2801 dual p-channel enhancement mode field effect transistor www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics 15 12 0 1 2 3 4 5 0 1 2 3 4 5 6 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 100 200 300 400 500 600 700 800 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 1 10 100 1000 10000 0.000001 0.0001 0.01 1 100 10000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) v ds =10v i d =3a 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z q q q q ja normalized transient thermal resistance singlepulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =85c/w t on t p d indescendingorder d=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse t j(max) =150c t a =25c 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t a =25c 100 m 10s AON2801 dual p-channel enhancement mode field effect transistor www.freescale.net.cn 4 / 5
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gatechargetestcircuit&waveform + + 10v ig vgs + vd c d ut l vgs isd dioderecoverytestcircuit&w aveform s vds vds+ di/dt r m rr vdd vdd q=idt t rr isd vds f i i vdc d ut vdd vgs vds vgs rl rg resistiveswitchingtestcircuit&w aveform s + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) AON2801 dual p-channel enhancement mode field effect transistor www.freescale.net.cn 5 / 5
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